- Title
- Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope
- Creator
- Bosman, M.; Tang, L. J.; Ye, J. D.; Tan, S. T.; Zhang, Y.; Keast, V. J.
- Relation
- Applied Physics Letters Vol. 95, Issue 10
- Publisher Link
- http://dx.doi.org/10.1063/1.3222974
- Publisher
- American Institute of Physics
- Resource Type
- journal article
- Date
- 2009
- Description
- Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In₀․₂₅Ga₀․₇₅N quantum wells.
- Subject
- arsenic; cadmium compounds; doping profiles; electron energy loss spectra
- Identifier
- http://hdl.handle.net/1959.13/916411
- Identifier
- uon:7983
- Identifier
- ISSN:0003-6951
- Rights
- © American Institute of Physics
- Language
- eng
- Full Text
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